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Product Detailed Parameters
- Description：IGBT MODULE 1200V 75A 277W SP4
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：277 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.6 nF @ 25 V
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Overview
The APTGT50DH120TG is a single IGBT module from Microchip Technology, utilizing Trench Field Stop technology. It features a 1.2 kV collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The device has a saturation voltage of 1.7 V and a power dissipation capacity of 277 W. Packaged in an SP4 screw-mount housing, it operates within a temperature range of -40°C to +100°C. The unit weighs 110 g and uses silicon as the semiconductor material.
Feature Summary
- Incorporates Trench Field Stop technology for enhanced switching performance.
- Designed with an asymmetrical bridge configuration for robust operation.
- Utilizes a durable SP4 package suitable for screw mounting applications.
Applications
- Industrial motor drives
- Power supply systems
- Inverter circuits
Procurement Notes
Verify the specific suffix and package variant against the official datasheet to ensure compatibility with thermal management requirements. Confirm that the supplier provides genuine Microchip Technology components with traceable documentation. Check for any recent product change notifications regarding pinout or electrical characteristics before finalizing procurement orders.
Selection Notes
Select this component when a 1.2 kV rating and 75 A continuous current are required in a compact SP4 form factor. Ensure the application environment supports the specified operating temperature range and that the gate drive circuitry aligns with the 20 V maximum gate-emitter voltage limit. Evaluate thermal resistance parameters for adequate heat sinking design.
Part Context
This part belongs to the PM-IGBT-TFS series, representing Microchip's discrete and power modules category. It is designed for high-efficiency power conversion tasks. The module integrates a single IGBT chip optimized for industrial applications requiring reliable switching and high current handling capabilities within a standardized mechanical footprint.
Replacement Considerations
The APTGT50DH120TG appears to be a successor or variant related to the APTGT50DA120TG. Verify pin compatibility and electrical specifications against existing designs. Cross-reference with other SP4 packaged IGBT modules if direct substitution is needed, ensuring voltage and current ratings meet or exceed original requirements.
