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Product Detailed Parameters
- Description：IGBT MODULE 600V 80A 176W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：176 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.15 nF @ 25 V
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Overview
The APTGT50DH60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP1-12 screw-mount package. It features an asymmetrical bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 600 nA. Power dissipation is rated at 176 W, while the maximum gate-emitter voltage is 20 V. Operating temperatures range from -40°C to +100°C.
Feature Summary
- Utilizes trench field-stop IGBT technology for efficient power conversion.
- Asymmetrical bridge configuration designed for specific circuit topologies.
- SP1-12 package enables secure screw-mount installation.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the exact suffix T1G against official Microchip documentation to confirm packaging and tape-and-reel specifications. Ensure the SP1-12 footprint matches the target PCB design. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement orders.
Selection Notes
Select this component when a 600V asymmetrical bridge topology is required within the SP1-12 form factor. The 80A continuous current rating suits moderate-power applications. Verify thermal management capabilities align with the 176W dissipation rating and the specified operating temperature range of -40°C to +100°C.
Part Context
This module belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. It shares the SP1-12 package style with other variants like the APTGT30H60T1G but differs in internal configuration as an asymmetrical bridge rather than a full bridge.
Replacement Considerations
Direct substitutes include other APTGT series modules in the SP1-12 package, such as the APTGT50DDA60T3G, provided the electrical ratings and pinout compatibility are verified against the specific application requirements.
