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Product Detailed Parameters
- Description：IGBT MODULE 600V 80A 176W SP4
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Power - Max：176 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.15 nF @ 25 V
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Overview
The APTGT50DH60TG is a trench field-stop IGBT module manufactured by Microsemi Corporation. It features an asymmetric bridge configuration housed in an SP4 base-mounted package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A. Key electrical parameters include a maximum power dissipation of 250 W and a typical saturation voltage of 1.9 V at 75 A with a 15 V gate drive. The module integrates an NTC thermistor for thermal monitoring and operates within a junction temperature range of -40°C to 175°C.
Feature Summary
- Trench field-stop IGBT technology for optimized switching performance
- Integrated NTC thermistor for precise thermal management
- Asymmetric bridge configuration for half-bridge applications
Applications
- Motor drives and inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the specific manufacturer source, as Microsemi's semiconductor division was acquired by Microchip Technology. Confirm RoHS compliance status and ensure the SP4 package dimensions match the target PCB layout. Check for obsolescence notices or lifecycle changes associated with the original Microsemi branding versus current Microchip distribution channels.
Selection Notes
Select this component for designs requiring a 600V rated, single-phase asymmetric bridge topology. Ensure the cooling solution can handle the 250 W power dissipation rating under expected operating conditions. Verify that the gate drive circuit provides the required 15 V swing to achieve the specified 1.9 V saturation voltage at the target load current.
Part Context
This part belongs to the APTGT series of insulated gate bipolar transistor modules from Microsemi. These modules are designed for high-efficiency power conversion applications. The SP4 package is a standard footprint for medium-power discrete and module implementations in industrial electronics.
Replacement Considerations
Direct replacements may include the APTGT75DH60TG or APTGT100DH60TG from the same family, provided the higher current ratings do not conflict with design constraints. Verify pinout compatibility and thermal resistance values before substitution.
