APTGT50H60T1G

Overview

The APTGT50H60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP1-12 screw-mount package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 600 nA. Power dissipation is rated at 176 W, while the maximum gate-emitter voltage is 20 V. The module operates within a temperature range of -40°C to +100°C.

Feature Summary

• Full bridge topology for single-phase inverter applications
• Trench field-stop IGBT technology for efficient switching
• Screw mount installation for secure thermal management

Applications

• Single-phase AC motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Procurement Notes

Verify the specific suffix T1G against official Microchip documentation to confirm packaging details and RoHS compliance status. Ensure the SP1-12 package dimensions match the target PCB or heatsink layout before finalizing procurement orders.

Selection Notes

Select this component when a 600 V rating and 80 A continuous current capacity are required for full bridge topologies. Compare the 1.5 V saturation voltage against system efficiency targets and verify that the 176 W power dissipation rating aligns with the available cooling infrastructure.

Part Context

This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. It shares the SP1-12 package form factor with other variants like the APTGT50DH60T1G, though configurations differ between full bridge and asymmetrical bridge designs within the same physical footprint.

Replacement Considerations

The APTGT50DH60T1G offers identical electrical ratings and package but uses an asymmetrical bridge configuration. Verify circuit topology compatibility before substitution.