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The APTGT600DA60G is a single silicon IGBT module manufactured by Microchip Technology, housed in the SP6 screw-mount package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 700 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.4 V and a gate-emitter leakage current of 800 nA. Maximum power dissipation is rated at 2.3 kW, with an operating temperature range from -40°C to +100°C. The unit weighs 110 g and supports a maximum gate-emitter voltage of 20 V.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with manufacturer specifications to maintain reliability. Cross-reference datasheet revisions to confirm parameter consistency during procurement planning.
Select this module for applications requiring 600 V blocking capability and 700 A continuous current handling. The SP6 package suits screw-mount implementations where thermal management is critical. Evaluate thermal resistance requirements against the 2.3 kW dissipation rating. Consider the -40°C to +100°C operating range for environmental compatibility.
This component belongs to the Microchip Technology APTGT series of IGBT modules. It shares the SP6 package form factor with other high-current variants in the lineup. The series utilizes standard silicon technology for power switching applications. Packaging typically involves tube configurations for individual unit protection.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and thermal characteristics when considering alternative modules from the same manufacturer or other vendors.