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The APTGT75A120T1G is a single IGBT module from Microchip Technology, utilizing silicon technology in an SP1 package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 110 A at 25°C. The device has a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 357 W. It supports screw mount installation with an operating temperature range from -40°C to +175°C.
Verify component authenticity through authorized Microchip distributors. Confirm RoHS compliance status via official documentation. Ensure storage conditions maintain integrity prior to assembly. Cross-reference datasheet revisions for any parameter updates before finalizing procurement specifications.
Select this module for applications requiring high voltage blocking capability and moderate current handling. Consider the SP1 package dimensions for thermal management and mechanical integration. Evaluate gate drive requirements against the specified maximum ratings to ensure reliable switching performance in the target circuit topology.
This component belongs to the APTGT series of Trench Field Stop IGBT modules. It represents a specific voltage and current variant within the broader portfolio of discrete power modules designed for efficient power conversion and control in demanding electronic systems.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameters when considering cross-brand replacements.