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The APTGT75A60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP-1 screw-mount package. It features a half-bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 250 W. Operating within a junction temperature range of -40°C to +175°C, it includes a gate-emitter leakage current of 600 nA and supports a maximum gate-emitter voltage of 20 V.
Verify the specific suffix T1G against official Microchip documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Ensure the SP-1 package dimensions match the target PCB or heatsink design requirements before finalizing procurement orders.
Select this component when a 600V half-bridge IGBT module is required for moderate power applications. The 100A current rating suits systems needing reliable switching without excessive heat generation. Verify that the 1.5V saturation voltage aligns with efficiency targets. Compare against single configurations if space allows for separate components.
This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. The series utilizes silicon technology for high-voltage switching. The SP-1 package provides a standardized form factor for industrial power electronics. This specific model integrates two IGBTs in a half-bridge arrangement for compact circuit designs.
The APTGT75DA60T1G offers similar electrical ratings but uses a single configuration and SP1-12 package. Verify pinout compatibility and thermal interface requirements before substitution. Other SP-1 variants may share mechanical footprints but require electrical validation.