APTGT75A60T1G

APTGT75A60T1G

$40.67
  • Description:IGBT MODULE 600V 100A 250W SP1
  • Series:-

SKU:62bfcd61edf0 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 100A 250W SP1
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 75A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):100 A
  • Power - Max:250 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:4.62 nF @ 25 V

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APTGT75A60T1G

Overview

The APTGT75A60T1G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP-1 screw-mount package. It features a half-bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 250 W. Operating within a junction temperature range of -40°C to +175°C, it includes a gate-emitter leakage current of 600 nA and supports a maximum gate-emitter voltage of 20 V.

Feature Summary

  • Half-bridge topology for efficient power switching applications
  • High thermal stability supporting operation up to 175°C junction temperature
  • Screw-mount installation for robust mechanical connection

Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • Inverter circuits

Procurement Notes

Verify the specific suffix T1G against official Microchip documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Ensure the SP-1 package dimensions match the target PCB or heatsink design requirements before finalizing procurement orders.

Selection Notes

Select this component when a 600V half-bridge IGBT module is required for moderate power applications. The 100A current rating suits systems needing reliable switching without excessive heat generation. Verify that the 1.5V saturation voltage aligns with efficiency targets. Compare against single configurations if space allows for separate components.

Part Context

This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. The series utilizes silicon technology for high-voltage switching. The SP-1 package provides a standardized form factor for industrial power electronics. This specific model integrates two IGBTs in a half-bridge arrangement for compact circuit designs.

Replacement Considerations

The APTGT75DA60T1G offers similar electrical ratings but uses a single configuration and SP1-12 package. Verify pinout compatibility and thermal interface requirements before substitution. Other SP-1 variants may share mechanical footprints but require electrical validation.

APTGT75A60T1GAPTGT75A60T1G
$40.67
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