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The APTGT75DDA60T3G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a dual configuration with a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 100 A at 25°C. The saturation voltage is 1.5 V, while power dissipation reaches 250 W. Gate-emitter leakage is limited to 600 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C, and it utilizes screw mount installation.
Verify the exact part number against official Microchip Technology documentation before procurement. Confirm that the SP3-32 package dimensions and pinout match the design requirements. Ensure thermal management solutions accommodate the specified 250 W power dissipation. Check for RoHS compliance status through the manufacturer's latest release notes. Validate operating temperature ranges against the specific application environment.
Select this component when a 600 V rating and 100 A current capacity are required in a compact dual module format. The SP3-32 package offers a balance between current handling and physical footprint. Consider the 1.5 V saturation voltage for efficiency calculations in low-voltage applications. Verify that the -40°C to +100°C operating range suits the intended thermal environment.
This module belongs to the APTGT series of trench field-stop IGBTs from Microchip Technology. It shares the SP3-32 packaging family with other variants like the APTGT75TL60T3G and APTGT75X60T3G. These modules are designed for general-purpose power switching applications requiring reliable performance in industrial settings.
Publicly confirmed substitute part numbers for APTGT75DDA60T3G were not found in the provided source material.