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The APTGT75DH120TG is a single IGBT module manufactured by Microsemi Corporation, utilizing Trench Field Stop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C. The device has a typical saturation voltage of 1.9 V at 75 A and a maximum power dissipation of 250 W. Housed in an SP4 package with screw mount installation, it operates within a junction temperature range of -40°C to 175°C.
Verify the component status carefully as distribution sources indicate this part may be discontinued or no longer sold by certain retailers. Confirm availability directly with authorized distributors or the manufacturer before finalizing procurement plans to avoid supply chain disruptions.
Select this module for applications requiring high voltage isolation and robust thermal management. Ensure the cooling solution supports the 250 W power dissipation rating. Verify that the gate drive voltage aligns with the standard input requirements for reliable switching operation.
This component belongs to the APTGT series of IGBT modules from Microsemi, designed for high-power switching applications. The SP4 package provides a compact footprint suitable for dense board layouts while maintaining high thermal efficiency through direct baseplate mounting.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative modules with matching 1200 V ratings, similar current capacities, and compatible SP4 packaging only after verifying electrical parameter equivalence.