APTGT75H60T1G

Overview

The APTGT75H60T1G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a SP1-12 package designed for screw mount installation. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 600 nA. The module handles a power dissipation of 250 W and operates within a temperature range of -40°C to +100°C.

Feature Summary

• Single configuration IGBT module with Trench Field-Stop technology
• SP1-12 package optimized for board mounting applications
• High thermal performance with 250 W power dissipation capability

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies

Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with existing thermal management solutions and gate drive requirements before integration into final designs.

Selection Notes

Select this component for applications requiring a 600 V rating and 100 A continuous current in a compact SP1-12 form factor. Consider the 1.5 V saturation voltage for efficiency calculations and verify that the operating environment stays within the specified -40°C to +100°C temperature limits.

Part Context

This part belongs to the Microchip APTGT series of IGBT modules, which are designed for general-purpose power switching applications. The series offers various configurations and voltage ratings to suit different industrial and commercial power electronics needs.

Replacement Considerations

Direct substitutes may include other Microchip single IGBT modules in the SP1-12 package with similar 600 V and 100 A ratings, such as the APTGT75DA60T1G, provided pinout and thermal specifications match.