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The APTGT75X60T3G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP3-32 package. It features a three-phase configuration with a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 250 W. Gate-emitter leakage current is specified at 600 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C, and the unit utilizes screw mount installation.
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP3-32 package dimensions and terminal configurations match the target PCB or busbar design requirements. Ensure thermal interface materials are compatible with the specified maximum junction temperature limits to maintain reliable operation under load conditions.
Select this component when a 600 V, 100 A three-phase IGBT solution is required within the SP3-32 form factor. Compare the 1.5 V saturation voltage and 250 W power dissipation against system thermal management capabilities. Verify that the -40°C to +100°C operating range aligns with the environmental constraints of the intended application environment.
This part belongs to the Microchip Technology APTGT series of trench field-stop IGBT modules. These components are designed for medium-power switching applications requiring high reliability. The SP3-32 package provides a standardized footprint for integration into various power electronic architectures, distinguishing it from single or dual configurations within the broader product line.
Direct replacements must match the 600 V rating, 100 A current capacity, and SP3-32 package outline. Verify pin compatibility and electrical characteristics such as saturation voltage and switching times. Consult Microchip Technology for official cross-reference data or updated series equivalents.