APTGTQ100DA65T1G

Overview

The APTGTQ100DA65T1G is a single IGBT module manufactured by Microchip Technology, utilizing silicon trench field-stop technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 250 W. It operates within a junction temperature range of -40°C to +125°C and is housed in an SP3F screw-mount package.

Feature Summary

• Single configuration with high-speed trench field-stop IGBT technology
• Integrated NTC thermistor for thermal monitoring
• Screw-mount installation style for robust mechanical connection

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency switching power converters

Procurement Notes

Verify the exact part number against official Microchip documentation to ensure compatibility with system requirements. Confirm that the SP3F package dimensions and terminal specifications match the intended heatsink and circuit board layout before procurement.

Selection Notes

Select this component for applications requiring a single-channel 650V IGBT with integrated thermal sensing. Ensure the design accommodates the 250W power dissipation limit and the specific gate drive voltage requirements associated with trench field-stop technology.

Part Context

This module belongs to the APTGTQ series of IGBT modules from Microchip Technology. It is designed for medium-power switching applications where reliability and thermal management are critical. The SP3F package provides a standardized form factor for industrial power electronics designs.

Replacement Considerations

Consult Microchip's official cross-reference guides or datasheets for verified equivalent parts. Do not substitute with generic IGBTs without verifying electrical parameters, package pinouts, and thermal characteristics.