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Product Detailed Parameters
- Description：IGBT MODULE 650V 100A 250W SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Dual Boost Chopper
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 100A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP3F
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：6 nF @ 25 V
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Overview
The Microchip Technology APTGTQ100DDA65T3G is a silicon IGBT module configured as a dual boost chopper. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 100 A at 25°C. The device has a collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 250 W. It operates within a temperature range of -40°C to +125°C, utilizes an SP3F package with screw mount installation, and includes a gate-emitter leakage current of 240 nA.
Feature Summary
- Dual boost chopper configuration for efficient power conversion
- High thermal stability with operation up to 125°C
- Robust mechanical design using screw mount installation
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- DC-DC converter circuits
Procurement Notes
Verify the specific suffix T3G against official Microchip documentation to confirm RoHS compliance and material composition. Ensure the SP3F package dimensions match the target PCB or chassis layout. Cross-reference the manufacturer part number directly with the datasheet to avoid confusion with similar variants in the APTGT series. Confirm that the screw mount requirements align with the assembly tooling specifications.
Selection Notes
Select this component when a dual boost topology is required within a compact SP3F form factor. The 650V rating suits medium-voltage applications, while the 100A current capacity supports high-power density designs. Consider the 1.65V saturation voltage for efficiency calculations in low-loss switching environments. Verify thermal management capabilities given the 250W dissipation limit in the intended operating environment.
Part Context
This part belongs to the APTGT series of IGBT modules from Microchip Technology, designed for industrial power electronics. The series emphasizes reliability and performance in challenging environments. The SP3F package provides a standardized mounting interface for chassis integration. This specific model targets applications requiring dual switch configurations without discrete component assembly.
Replacement Considerations
APTGTQ100H65T3G is a quad configuration variant within the same series. Verify pinout compatibility and thermal characteristics before substitution. The DDA65 designation indicates specific internal diode and transistor matching not present in all alternatives.
