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The APTGTQ50TA65T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP3F screw-mount package. It features a hex configuration with a maximum collector-emitter voltage of 650 V and a continuous collector current of 50 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.65 V and a power dissipation rating of 125 W. Gate-emitter leakage current is specified at 120 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +125°C, and the unit weighs 110 g.
Verify the complete part number including suffixes against official Microchip documentation to ensure correct configuration. Confirm package type and thermal specifications match system requirements before ordering. Check for recent Product Change Notifications regarding manufacturing updates or material changes.
Select this module based on its 650 V blocking capability and 50 A current rating for medium-power applications. Ensure the SP3F package dimensions align with available heatsinking infrastructure. Verify that the 125 W power dissipation rating meets thermal management constraints under expected operating conditions.
This component belongs to the APTGTQ series of IGBT modules from Microchip Technology. It utilizes trench field-stop technology for improved switching performance. The SP3F package provides a standardized form factor for industrial power electronics designs requiring robust screw-mount solutions.
Direct substitutes include APTGTQ50TA65TPG and APTGTQ50TA65T1G within the same series. Verify pin compatibility and thermal characteristics when considering alternative packages or manufacturers.