SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGV15H120T3G is a full-bridge IGBT power module manufactured by Microsemi Corporation. It utilizes NPT and Trench Field Stop technology to optimize switching performance. The device features a maximum collector-emitter breakdown voltage of 1200 V and operates within a junction temperature range of -40°C to 150°C. Packaged in SP3 format, this component is designed for high-efficiency power conversion applications requiring robust inductive load handling.
Verify the specific manufacturer source, as historical data indicates transitions between Microsemi and other entities like Aptex or On Semiconductor. Confirm RoHS compliance status and current production availability directly with authorized distributors. Ensure the SP3 package variant matches the required mechanical footprint for the target application design.
Select this module for applications requiring a complete full-bridge topology in a compact SP3 package. The Trench Field Stop technology offers advantages in switching speed and efficiency compared to standard planar designs. Evaluate thermal management requirements carefully, as the 150°C rating allows for higher density designs but demands effective heat sinking solutions.
This component belongs to the Microsemi (formerly Aptex) high-voltage IGBT module family. It represents an evolution in power semiconductor packaging, combining advanced chip technology with reliable SP3 mechanical interfaces. The product line targets industrial markets demanding high reliability and efficient power processing capabilities.
Publicly confirmed direct substitute part numbers are not available in the provided documentation. Users should consult official replacement guides from the manufacturer or authorized distributors for cross-reference information regarding equivalent full-bridge modules.