APTGX100A120T1G

APTGX100A120T1G

$45.66
  • Description:PM-IGBT-TFS-SP1F
  • Series:-

SKU:636fa0e560bc Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:PM-IGBT-TFS-SP1F
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):155 A
  • Power - Max:416 W
  • Current - Collector Cutoff (Max):15 µA
  • Input Capacitance (Cies) @ Vce:20000 pF @ 25 V

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APTGX100A120T1G

Overview

The APTGX100A120T1G is a silicon IGBT module from Microchip Technology, featuring a half-bridge configuration. It operates with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 155 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.55 V and supports a power dissipation of 416 W. Designed for robust performance, it functions within an operating temperature range of -40°C to +125°C. The module utilizes Trench 7 technology and is housed in an SP1F package, suitable for chassis mounting applications requiring high reliability.

Feature Summary

  • Utilizes Trench 7 silicon technology for optimized switching characteristics
  • Features a half-bridge configuration for efficient power conversion
  • Designed for high thermal stability across extended temperature ranges

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the specific suffix and package variant against official Microchip documentation before ordering. Confirm that the SP1F package type matches the intended chassis mounting requirements. Ensure compatibility with gate drive circuits regarding the 20 V maximum gate-emitter voltage rating. Cross-reference the part number with the latest datasheet revision to confirm technical specifications and compliance status.

Selection Notes

Select this component for applications requiring a 1200 V rated half-bridge IGBT module with high current handling capabilities. Consider the 1.55 V saturation voltage for efficiency calculations in power loss scenarios. Evaluate the 416 W power dissipation limit against the thermal management solution available in the target system design. Ensure the chassis mounting style aligns with the mechanical constraints of the assembly.

Part Context

This part belongs to the Microchip Technology IGBT modules category, specifically utilizing Trench 7 technology. It serves as a discrete power semiconductor component designed for medium to high-power electronic applications. The module integrates dual switches in a single package to facilitate phase leg configurations commonly found in inverters and converters.

Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Generic cross-references may not match the specific Trench 7 electrical characteristics or thermal performance.

APTGX100A120T1GAPTGX100A120T1G
$45.66
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