SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGX100A120T1G is a silicon IGBT module from Microchip Technology, featuring a half-bridge configuration. It operates with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 155 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.55 V and supports a power dissipation of 416 W. Designed for robust performance, it functions within an operating temperature range of -40°C to +125°C. The module utilizes Trench 7 technology and is housed in an SP1F package, suitable for chassis mounting applications requiring high reliability.
Verify the specific suffix and package variant against official Microchip documentation before ordering. Confirm that the SP1F package type matches the intended chassis mounting requirements. Ensure compatibility with gate drive circuits regarding the 20 V maximum gate-emitter voltage rating. Cross-reference the part number with the latest datasheet revision to confirm technical specifications and compliance status.
Select this component for applications requiring a 1200 V rated half-bridge IGBT module with high current handling capabilities. Consider the 1.55 V saturation voltage for efficiency calculations in power loss scenarios. Evaluate the 416 W power dissipation limit against the thermal management solution available in the target system design. Ensure the chassis mounting style aligns with the mechanical constraints of the assembly.
This part belongs to the Microchip Technology IGBT modules category, specifically utilizing Trench 7 technology. It serves as a discrete power semiconductor component designed for medium to high-power electronic applications. The module integrates dual switches in a single package to facilitate phase leg configurations commonly found in inverters and converters.
Consult official Microchip substitution guides for verified alternatives. Generic cross-references may not match the specific Trench 7 electrical characteristics or thermal performance.