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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 200A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：350 A
- Power - Max：980 W
- Current - Collector Cutoff (Max)：15 µA
- Input Capacitance (Cies) @ Vce：40000 pF @ 25 V
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Overview
The APTGX200A120T3AG is a dual silicon IGBT power module manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 350 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a maximum power dissipation of 980 W. Gate-emitter leakage current is specified at 150 nA, with a gate-emitter voltage range of -20 V to +20 V. The component operates within a temperature range of -40°C to +125°C and utilizes an SP3F press-fit package.
Feature Summary
- Dual configuration for bridge leg applications
- Press-fit mounting style for secure mechanical connection
- Silicon trench field-stop technology
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix T3AG against official Microchip documentation to confirm pinout and thermal interface specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Ensure the SP3F package dimensions match the target heatsink design before procurement.
Selection Notes
Select this module when a dual IGBT configuration with high current capacity is required. The 1.2 kV rating suits medium-voltage industrial systems. Verify that the press-fit installation method aligns with the assembly equipment capabilities. Check thermal resistance values in the datasheet to ensure adequate cooling solutions are available for the 980 W dissipation rating.
Part Context
This part belongs to the Microchip APTGX series of high-power IGBT modules. The series utilizes advanced trench field-stop technology for improved switching performance. The SP3F package provides a compact form factor suitable for dense power electronics designs. It serves as a discrete solution for applications requiring robust switching capabilities.
Replacement Considerations
Direct replacements must match the 1.2 kV voltage rating, 350 A current capacity, and SP3F package type. Verify pin compatibility and thermal characteristics before substitution. Consult Microchip for updated equivalents if the specific suffix variant is discontinued.
