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Product Detailed Parameters
- Description：PM-IGBT-TFS-D3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：385 A
- Power - Max：1.034 kW
- Current - Collector Cutoff (Max)：25 µA
- Input Capacitance (Cies) @ Vce：31300 pF @ 25 V
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Overview
The APTGX300A170D3G is a dual IGBT power module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 385 A at 25°C. The saturation voltage is specified at 1.7 V, with a gate-emitter leakage current of 150 nA. Power dissipation reaches 1.034 kW. The device operates within a temperature range of -40°C to +175°C and supports a maximum gate-emitter voltage of 20 V. It employs screw mount installation in the D3-11 package.
Feature Summary
- Dual common emitter configuration for high-power switching applications
- High thermal stability supporting operation up to 175°C junction temperature
- Robust 1.7 kV blocking capability suitable for medium-voltage industrial systems
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized Microchip distributors or certified partners. Confirm RoHS compliance status via official datasheets. Check for recent Product Change Notifications (PCN) regarding manufacturing updates. Ensure supply chain integrity to avoid counterfeit components. Validate specific ordering suffixes against current Microchip documentation.
Selection Notes
Select this module for applications requiring 1.7 kV isolation and high current handling. Compare saturation voltage and thermal resistance against alternative packages. Verify compatibility with existing cooling solutions given the 1.034 kW dissipation rating. Ensure gate drive circuits support the 20 V maximum limit. Consider the dual configuration benefits for bridge topologies.
Part Context
This component belongs to the PM-IGBT-TFS-D3 series from Microchip Technology. It represents part of the broader portfolio of silicon-based IGBT modules designed for robust power conversion. The D3-11 package standardizes mounting interfaces across similar voltage ratings within the product line.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult Microchip technical support for qualified alternatives matching the 1.7 kV, 385 A specifications and D3-11 footprint.
