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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP6C
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：415 A
- Power - Max：1.02 kW
- Current - Collector Cutoff (Max)：24 µA
- Input Capacitance (Cies) @ Vce：60000 pF @ 25 V
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Overview
The Microchip Technology APTGX300HR120G is a high-speed IGBT4 power module designed for inverter applications. It features a half-bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 415 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a power dissipation rating of 1.02 kW. Operating within a temperature range of -40°C to +125°C, it utilizes screw mount installation and silicon technology.
Feature Summary
- High-speed IGBT4 technology optimized for low switching losses
- Half-bridge configuration suitable for three-level inverter topologies
- Robust thermal performance with 1.02 kW power dissipation capability
Applications
- Three-level inverter systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors to ensure component authenticity and compliance with current manufacturing specifications. Confirm that the package type and mounting requirements align with your thermal management design before finalizing procurement orders.
Selection Notes
Select this module for applications requiring high voltage blocking capability and significant current handling in compact power electronics designs. Consider the half-bridge topology when designing circuits that benefit from reduced component count compared to discrete solutions. Ensure gate drive characteristics match the specified voltage limits for reliable operation.
Part Context
This component belongs to Microchip's high-speed IGBT4 power module series, which integrates advanced silicon technology for improved efficiency. The APTGX300HR120G is part of a family of modules engineered for demanding power conversion environments, offering enhanced switching performance relative to standard IGBT generations.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip Technology resources for cross-reference information or updated product line replacements.
