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The Microchip Technology APTGX300HR170G is a silicon-based IGBT power module featuring a T-type dual common emitter configuration. It operates with a maximum collector-emitter voltage of 1700 V and delivers a continuous collector current of 385 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and supports a power dissipation of 1034 W. Designed for robust performance, it functions within a temperature range of -40°C to +175°C and utilizes screw mount installation.
Verify the specific datasheet revision and package variant before procurement, as Microchip may update specifications or manufacturing locations. Confirm that the screw mount interface matches your thermal management system requirements. Ensure compatibility with gate drive voltages specified in the official documentation to prevent device damage during operation.
Select this component when designing systems requiring high voltage isolation and significant current handling capacity. The T-type configuration offers distinct advantages for neutral-point-clamped topologies compared to standard half-bridge modules. Evaluate thermal resistance characteristics against your heatsink design to ensure junction temperatures remain within the specified operational limits under peak load conditions.
This part belongs to the APTGX series of high-performance IGBT modules from Microchip Technology. It represents an evolution in power semiconductor packaging, combining advanced silicon carbide-compatible designs with traditional silicon IGBTs. The series targets demanding industrial and traction applications where reliability and efficiency are critical parameters for system longevity.
Direct replacements must match the 1700V rating, 385A current capability, and SP6C package dimensions. Verify pinout compatibility and thermal interface specifications. Cross-reference with other Microchip T-type modules or equivalent industry standards ensuring identical electrical characteristics and mounting constraints.