APTGX300TL120G

Overview

The Microchip Technology APTGX300TL120G is a silicon Trench 7 IGBT module designed for three-level inverter configurations. It features a SP6C package with chassis mounting and supports a collector-emitter breakdown voltage of 1200 V. The device provides a continuous collector current of 415 A at 25°C, with a typical saturation voltage of 1.55 V. Power dissipation is rated at 1020 W, operating within a temperature range of -40°C to +175°C.

Feature Summary

• Utilizes Trench 7 silicon technology for optimized switching performance
• Engineered specifically for three-level inverter topologies
• Features low saturation voltage characteristics for efficiency

Applications

• Three-level inverter systems
• Industrial motor drives
• High-power conversion equipment

Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm exact electrical parameters and thermal characteristics. Ensure that the selected variant matches the required three-level inverter application requirements. Cross-reference datasheet specifications for mounting torque and thermal interface details before integration.

Selection Notes

Select this component when a three-level inverter topology is required with high current capacity. The SP6C package offers chassis mounting suitable for robust industrial environments. Evaluate the 1.55 V saturation voltage against system efficiency targets and ensure the 415 A current rating aligns with load demands.

Part Context

This module belongs to the Microchip PM-IGBT-TFS-SP6C series, utilizing advanced Trench 7 technology. It is distinct from standard two-level modules by its specific configuration for three-level inverters. The part integrates high-voltage silicon capabilities into a compact power module format for demanding applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.