APTGX450DU120T6G

APTGX450DU120T6G

$166.93
  • Description:PM-IGBT-TFS-SP6C
  • Series:-

SKU:77eddef197a8 Category: Brand:

  
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Product Detailed Parameters

  • Description:PM-IGBT-TFS-SP6C
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Dual, Common Emitter
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 450A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):605 A
  • Power - Max:1.456 kW
  • Current - Collector Cutoff (Max):36 µA
  • Input Capacitance (Cies) @ Vce:90000 pF @ 25 V

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APTGX450DU120T6G

Overview

The APTGX450DU120T6G is a high-power IGBT module manufactured by Microchip Technology, designed for demanding industrial applications. It features a dual common emitter configuration within the SP6C package. The device supports a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 450 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V and a power dissipation rating of 1.3 kW. The module utilizes silicon technology and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

  • High-speed IGBT4 technology optimized for low switching losses and reduced conduction drops.
  • Dual common emitter configuration providing robust performance in bridge topologies.
  • SP6C packaging designed for efficient thermal management and screw-mount installation.

Applications

  • Industrial motor drives and variable frequency drives
  • Uninterruptible power supplies (UPS) systems
  • Induction heating equipment

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or direct channels. Confirm that the specific part number matches the required SP6C package and IGBT4 generation specifications. Ensure compliance with RoHS directives and check for any recent Product Change Notifications affecting assembly sites or materials before procurement.

Selection Notes

Select this module based on its 1200 V blocking capability and 450 A current handling capacity. Evaluate thermal resistance requirements against the 1.3 kW power dissipation limit. Compare the SP6C footprint against available board space and cooling solutions. Ensure gate drive voltages align with the standard 15 V/20 V operating range for optimal switching performance.

Part Context

This component belongs to the APTGX series of high-performance IGBT modules from Microchip Technology. It represents an evolution in power semiconductor design, focusing on efficiency improvements over previous generations. The series is engineered for high-frequency switching applications where minimizing energy loss is critical for system reliability and thermal management.

Replacement Considerations

Direct replacements must match the 1200 V, 450 A, SP6C specification. Verify pin compatibility and thermal characteristics. Cross-reference with other Microchip APTGT or APTGX variants if current ratings differ slightly, ensuring the substitute maintains equivalent switching speed and saturation voltage profiles.

APTGX450DU120T6GAPTGX450DU120T6G
$166.93
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