ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PM-IGBT-TFS-SP6C
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 600A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：805 A
- Power - Max：1.923 kW
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：120000 pF @ 25 V
Download product information
Overview
The APTGX600A120T6G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP6C package. It features a half-bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 805 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 1.923 kW, while the gate-emitter voltage range spans from -20 V to +20 V. Operating temperatures extend from -40°C to +125°C, and it utilizes screw mount installation.
Feature Summary
- Half-bridge topology for efficient power switching applications
- High current handling capability suitable for demanding industrial loads
- Robust thermal performance within specified operating temperature ranges
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure proper handling procedures are followed due to the sensitive nature of semiconductor devices. Cross-reference datasheet revisions to guarantee compatibility with existing design specifications.
Selection Notes
Evaluate thermal management requirements against the 1.923 kW power dissipation rating. Verify that the system can accommodate the 805 A continuous current capacity at the intended operating temperature. Ensure the control circuitry supports the specified gate-emitter voltage limits. Consider the SP6C package dimensions for mechanical fitment and screw mounting constraints.
Part Context
This component belongs to Microchip Technology's high-power IGBT module lineup, designed for robust performance in industrial environments. The SP6C packaging offers a standardized form factor for easy integration into existing power electronics architectures. It represents a solution for applications requiring high voltage and current handling capabilities.
Replacement Considerations
Consult official Microchip Technology substitution guides for verified alternatives. Ensure any replacement matches the SP6C package, 1.2 kV rating, and half-bridge configuration. Verify electrical parameters such as saturation voltage and current ratings align with original design requirements.
