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The APTGX600SK170T6G is a single IGBT power module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 750 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 200 nA. Maximum power dissipation is rated at 1.948 kW, with an operating temperature range from -40°C to +175°C. The module employs screw mount installation within the SP6 package and supports a maximum gate-emitter voltage of 20 V.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage during assembly processes.
Select this module for applications requiring high blocking voltage and substantial current handling in a single-chip configuration. Evaluate thermal management requirements against the 1.948 kW dissipation rating. Verify that system voltage levels remain within the 1.7 kV limit and that gate drive signals do not exceed 20 V to ensure reliable long-term operation.
This component belongs to the APTGX series of high-power IGBT modules from Microchip Technology. It represents a silicon-based solution engineered for robustness in industrial power electronics. The SP6 package provides a standardized mechanical interface for screw mounting, facilitating integration into existing high-power converter architectures and heat sink systems.
Direct substitutes require matching 1.7 kV voltage rating, approximately 750 A current capacity, and compatible SP6 packaging. Verify pinout compatibility and thermal resistance characteristics before substitution. Consult Microchip Technology for officially qualified alternative part numbers within the same product family.