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The APTGX75H170T3G is a full bridge IGBT power module manufactured by Microchip Technology. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 120 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 150 nA. Maximum operating temperatures reach +175°C, with a gate-emitter maximum voltage of 20 V. Designed for screw mount installation, this component utilizes silicon technology within the PM-IGBT-TFS-SP3F package configuration.
Verify the specific suffix T3G against official Microchip documentation to confirm pinout and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the SP3F package dimensions match the target PCB or heatsink design requirements before finalizing procurement orders.
Select this module when system designs require a 1.7 kV blocking voltage with a 120 A continuous current rating. The full bridge topology simplifies circuit design for single-phase or three-phase configurations. Verify that the 1.7 V saturation voltage aligns with thermal management capabilities and efficiency targets for the intended application environment.
This component belongs to the Microchip IGBT module family, specifically utilizing trench field-stop technology. It serves as a discrete power switching element designed for robust performance in demanding electrical environments. The part number indicates specific voltage and current ratings distinct from other variants in the broader product line.
Check for direct substitutes within the APTGX series with identical voltage and current ratings. Verify compatibility of the SP3F package footprint with existing board layouts. Ensure thermal resistance and mounting hole patterns match if replacing an existing unit in a deployed system.