SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGX75TA170TPG is a silicon IGBT power module manufactured by Microchip Technology. It features a three-phase configuration housed in the SP6P package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.7 kV and delivers a continuous collector current of 120 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, gate-emitter leakage current of 150 nA, and maximum power dissipation of 382 W. The unit operates within a temperature range of -40°C to +175°C and has a maximum gate-emitter voltage rating of 20 V.
Verify component authenticity through authorized Microchip Technology distributors or direct manufacturer channels. Confirm RoHS compliance status using official documentation before integration. Ensure supply chain partners provide valid traceability records. Cross-reference datasheet revisions to confirm parameter consistency. Validate packaging integrity upon receipt to prevent mechanical damage during handling.
Select this module for high-voltage three-phase applications requiring robust switching performance. Evaluate thermal resistance characteristics against system heat sink capabilities. Verify gate drive voltage compatibility with the 20 V maximum rating. Consider the SP6P package dimensions for PCB or chassis layout constraints. Assess short-circuit withstand time requirements against application fault conditions.
This component belongs to the Microchip APTGX series of high-power IGBT modules. The series utilizes trench field-stop technology for optimized switching losses. The SP6P package provides a standardized footprint for three-phase configurations. This specific part number denotes the 1.7 kV voltage class variant within the lineup.
Direct pin-compatible substitutes are not explicitly confirmed in public documentation. Evaluate alternative Microchip SP6P packages with matching voltage and current ratings. Verify thermal interface material compatibility when swapping modules. Check gate threshold voltage similarities to ensure driver circuit compatibility.