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Product Detailed Parameters
- Description：MOSFET 2N-CH 1000V 65A SP6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C：65A
- Rds On (Max) @ Id, Vgs：156mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs：562nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：15200pF @ 25V
- Power - Max：1250W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Grade：-
- Qualification：-
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Overview
The APTM100A13SCG is a Power MOS 7 N-channel MOSFET power module in an SP6 package. It features a 1000 V drain-source breakdown voltage and a continuous drain current of 65 A at Tc = 25°C. The typical on-resistance is 130 mΩ, with a maximum of 156 mΩ. Maximum power dissipation is 1250 W at Tc = 25°C. The junction-to-case thermal resistance is 0.1 °C/W. Operating junction temperature ranges from -40°C to 150°C.
Feature Summary
- Power MOS 7 technology providing low on-resistance and low gate charge
- Integrated parallel Silicon Carbide Schottky diode with zero reverse recovery
- Kelvin source connection for simplified gate drive implementation
- Isolated base design enabling direct mounting to heatsinks
Applications
- Motor control systems
- Switched Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific revision level against the manufacturer's datasheet before procurement. Confirm that the SP6 package mounting torque requirements are met during installation. Ensure electrostatic discharge handling procedures are followed as the device is sensitive to ESD. Validate thermal interface material compatibility for the specified junction-to-case thermal resistance.
Selection Notes
Select this component for high-frequency applications requiring rugged avalanche energy ratings. The integrated SiC diode eliminates reverse recovery losses, improving efficiency in hard-switching topologies. Evaluate the 156 mΩ maximum on-resistance against conduction loss requirements at the target operating current. Consider the Kelvin source terminal when designing the gate drive circuit layout to minimize stray inductance effects.
Part Context
This module belongs to the APTM100 series of discrete semiconductor modules manufactured by Microchip Technology. It utilizes Power MOS 7 technology within an isolated SP6 package designed for screw-mount installation. The product integrates both the switching element and a parallel freewheeling diode into a single assembly.
Replacement Considerations
Public confirmed substitute part numbers: None identified in verified documentation.
FAQ
What is the maximum repetitive avalanche energy rating?
The device is rated for 30 mJ of repetitive avalanche energy.
How does the integrated SiC diode behave regarding forward recovery?
The parallel SiC Schottky diode exhibits zero forward recovery and temperature-independent switching behavior.
What is the isolation voltage capability of the package?
The RMS isolation voltage between any terminal and the case is 4000 V for one minute at 50/60 Hz.
