APTM100AM90FG

Overview

The APTM100AM90FG is a Power MOS 7 FREDFET phase leg module featuring an N-channel configuration with a 1000 V drain-source breakdown voltage. It provides a continuous drain current of 78 A at Tc = 25°C and 59 A at Tc = 80°C, alongside a pulsed drain current capability of 312 A. The device exhibits a maximum on-resistance of 105 mΩ and supports a maximum power dissipation of 1250 W at Tc = 25°C. Operating within a junction temperature range of -40°C to 150°C, it utilizes an SP6 isolated package designed for direct heatsink mounting.

Feature Summary

• Power MOS 7 FREDFET technology providing low on-resistance, low gate charge, and fast intrinsic reverse diode characteristics
• Kelvin source connection integrated for simplified driver circuitry and reduced stray inductance
• Avalanche energy rated design ensuring high ruggedness under repetitive and non-repetitive avalanche conditions
• Isolated SP6 package architecture enabling direct mounting to heatsinks with high isolation voltage

Applications

• Welding converters
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Motor control systems

Procurement Notes

Verify the specific revision level against the latest Microchip datasheet before procurement. Confirm that the ordering suffix matches the required thermal or electrical specifications. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Validate compatibility with M5 power connectors and verify torque requirements for mounting terminals.

Selection Notes

Select this component for applications requiring high-frequency operation and robust switching performance. Evaluate the thermal resistance and case temperature limits to ensure adequate cooling solutions are implemented. Consider the avalanche energy rating when designing circuits prone to inductive load switching. Verify that the gate drive voltage aligns with the specified threshold and leakage current parameters.

Part Context

This module belongs to the Power MOS 7 family, which integrates advanced silicon technologies for improved efficiency. The SP6 package format is standard for high-power discrete modules, facilitating mechanical integration into industrial power electronics. The product line emphasizes low profile designs and high levels of integration for compact system architectures.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-reference electrical ratings such as breakdown voltage, on-resistance, and package dimensions to ensure functional equivalence. Do not assume interchangeability based solely on physical footprint without verifying internal semiconductor characteristics.

FAQ

What is the maximum RMS isolation voltage between any terminal and the case?

The maximum RMS isolation voltage is 4000 V when tested for one minute at 50/60 Hz.

How does the reverse recovery time of the intrinsic diode vary with temperature?

The reverse recovery time increases from 320 ns at a junction temperature of 25°C to 650 ns at 125°C.

What are the recommended mounting torques for the module's terminals?

The recommended mounting torque is 2 to 3.5 N.m for M5 terminals and 3 to 5 N.m for M6 terminals.