APTM100H45FT3G

Overview

The APTM100H45FT3G is a silicon-based N-Channel MOSFET module from Microchip Technology, utilizing the POWER MOS 7 technology. It features a Full Bridge configuration within an SP3 package designed for chassis mounting. Key electrical parameters include a drain-source breakdown voltage (Vds) of 1000 V and a continuous drain current (Id) of 18 A at case temperatures up to 80°C. The typical on-resistance (Rds(on)) is 450 mOhms. The device supports a gate-source voltage range of -30 V to +30 V with a threshold voltage of 3 V. Maximum power dissipation is rated at 357 W, operating within a temperature range of -40°C to +150°C.

Feature Summary

• Integrates four N-Channel FREDFETs in a single Full Bridge configuration for efficient power conversion.
• Utilizes Silicon POWER MOS 7 technology to achieve low on-resistance and optimized switching performance.
• Designed for robust chassis mounting applications requiring high voltage isolation and thermal stability.

Applications

• High-frequency DC-DC converters
• Induction heating systems
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific suffix FT3G against official Microchip documentation to confirm package type and terminal configuration. Ensure the procurement channel provides valid RoHS compliance data. Cross-reference the datasheet revision date to guarantee accurate electrical characteristics and mechanical dimensions are applied during design integration.

Selection Notes

Select this component for applications requiring a 1000 V rating and moderate current handling in a compact form factor. The 450 mOhm on-resistance influences conduction losses; evaluate thermal management requirements based on the 357 W dissipation rating. Confirm that the chassis mount interface matches the system's heat sink design constraints.

Part Context

This module belongs to the APTM series of discrete and power modules manufactured by Microchip Technology. It represents a specialized power semiconductor solution combining multiple transistors into a unified package. The product line targets industrial and commercial power electronics where reliability and high-voltage capability are critical operational requirements.

Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Generic cross-references may not match the specific SP3 package dimensions or internal die specifications required for direct replacement without redesigning the PCB layout or thermal interface.