SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
APTM100H45SCTG is a power module from Microchip Technology. It utilizes CoolMOS technology for the MOSFETs and SiC diodes. The junction-to-case thermal resistance is 0.5 °C/W for the CoolMOS component and 1.42 °C/W for the SiC diode. The operating junction temperature range spans from -40°C to 150°C, with a recommended operating junction temperature of -40°C to TJmax minus 25°C. Storage temperature ranges from -40°C to 125°C. The operating case temperature extends from -40°C to 100°C. The device is housed in an SP4 package.
Verify the specific datasheet version and revision history before procurement to ensure compatibility with current design requirements. Confirm that the SP4 package dimensions match the intended mechanical layout. Check for any recent product change notifications or obsolescence notices from Microchip Technology. Ensure that the supplier provides authentic components with traceable documentation.
Select this module when high efficiency and thermal performance are critical. The combination of CoolMOS and SiC technologies offers advantages in switching losses and reverse recovery characteristics. Consider the SP4 package size relative to available board space and heatsinking capabilities. Evaluate the thermal resistance values against the expected power dissipation and ambient conditions.
The APTM100H45SCTG belongs to Microchip's portfolio of discrete and power modules. It represents a hybrid approach combining advanced silicon MOSFET technology with wide-bandgap silicon carbide diodes. This configuration targets applications requiring robust performance under demanding electrical and thermal conditions.
Consult official Microchip documentation for verified substitute part numbers. Cross-reference pinouts, thermal characteristics, and electrical ratings carefully. Do not assume functional equivalence based solely on package type or voltage class without explicit manufacturer confirmation.