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Product Detailed Parameters
- Description：MOSFET 6N-CH 1000V 22A SP6-P
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C：22A
- Rds On (Max) @ Id, Vgs：420mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：5200pF @ 25V
- Power - Max：390W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP6-P
- Grade：-
- Qualification：-
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FAQ
What is the primary function of the APTM100TA35SCTPG?
It is a high-power IGBT module designed for industrial motor drives and power conversion applications.
Does this component include integrated gate drivers?
No, it is a discrete IGBT module requiring external gate drive circuitry for operation.
