APTM10AM05FTG

APTM10AM05FTG

$162.08
  • Description:MOSFET 2N-CH 100V 278A SP4
  • Series:-

SKU:cf21c4f79dcd Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 278A SP4
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:278A
  • Rds On (Max) @ Id, Vgs:5mOhm @ 125A, 10V
  • Vgs(th) (Max) @ Id:4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:700nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:20000pF @ 25V
  • Power - Max:780W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP4
  • Supplier Device Package:SP4
  • Grade:-
  • Qualification:-

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APTM10AM05FTG

Overview

The APTM10AM05FTG is a silicon FREDFET module featuring two N-channel MOSFETs in a half-bridge configuration. It has a drain-source voltage of 100V and a continuous drain current of 207A at 80°C case temperature. The typical on-resistance is 4.5 mΩ. Peak pulsed current capability is 1100A, with a maximum power dissipation of 780W. The device operates within a junction temperature range of -40°C to 150°C and utilizes the SP4 base-mounted package.

Feature Summary

  • Integrates two N-channel MOSFETs in a half-bridge topology for phase leg applications
  • Utilizes FREDFET technology for optimized switching performance
  • Designed for base mounting via the SP4 package format

Applications

  • Phase leg circuits in power conversion systems
  • Industrial motor drive inverters
  • High-frequency DC-DC converters

Procurement Notes

Verify the specific suffix 'FTG' against official Microchip Technology documentation to confirm exact manufacturing lot details and compliance status. Ensure that the SP4 package dimensions match the target thermal management design requirements before finalizing procurement orders.

Selection Notes

Select this component when a 100V rating and high current capacity are required for half-bridge topologies. The 4.5 mΩ on-resistance supports efficient conduction in low-voltage, high-current applications. Consider the 780W power dissipation limit for adequate heatsinking solutions.

Part Context

This part belongs to the APTM series of discrete and power modules from Microchip Technology. It is categorized under MOSFET arrays and serves as a solution for power electronics requiring integrated switching elements. The SP4 package indicates a standardized footprint for industrial power modules.

Replacement Considerations

Consult official cross-reference data for direct substitutes. Verify pinout compatibility and thermal resistance values if considering alternative manufacturers or different part numbers within the same voltage class.

APTM10AM05FTGAPTM10AM05FTG
$162.08
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