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The APTM10AM05FTG is a silicon FREDFET module featuring two N-channel MOSFETs in a half-bridge configuration. It has a drain-source voltage of 100V and a continuous drain current of 207A at 80°C case temperature. The typical on-resistance is 4.5 mΩ. Peak pulsed current capability is 1100A, with a maximum power dissipation of 780W. The device operates within a junction temperature range of -40°C to 150°C and utilizes the SP4 base-mounted package.
Verify the specific suffix 'FTG' against official Microchip Technology documentation to confirm exact manufacturing lot details and compliance status. Ensure that the SP4 package dimensions match the target thermal management design requirements before finalizing procurement orders.
Select this component when a 100V rating and high current capacity are required for half-bridge topologies. The 4.5 mΩ on-resistance supports efficient conduction in low-voltage, high-current applications. Consider the 780W power dissipation limit for adequate heatsinking solutions.
This part belongs to the APTM series of discrete and power modules from Microchip Technology. It is categorized under MOSFET arrays and serves as a solution for power electronics requiring integrated switching elements. The SP4 package indicates a standardized footprint for industrial power modules.
Consult official cross-reference data for direct substitutes. Verify pinout compatibility and thermal resistance values if considering alternative manufacturers or different part numbers within the same voltage class.