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The APTM10DHM09T3G is a power MOSFET module manufactured by Microsemi Corporation. It features an N-channel configuration housed in an SP6-P package designed for base mounting. The device supports a drain-source voltage of 100V and delivers a continuous drain current of 139A at case temperature of 25°C. Its typical on-resistance is 9mΩ, with a maximum gate threshold voltage of 4V at 2.5mA drain current. The module includes six channels arranged as three phase legs, suitable for high-frequency power conversion applications.
Verify the manufacturer designation carefully, as this component has been associated with both Advanced Power Technology and Microchip Technology in public records. Confirm the specific datasheet revision and RoHS compliance status prior to procurement. Ensure that the ordering suffix matches the required pinout and isolation specifications for your design. Cross-reference the part number against official distributor catalogs to confirm current production status and availability.
Select this module when designing circuits requiring integrated three-phase bridge configurations with high current handling capabilities. The SP6-P package offers low junction-to-case thermal resistance, making it suitable for compact designs where direct heatsink mounting is preferred. Consider the 100V rating and 139A current capacity to ensure adequate headroom for your specific load requirements and switching frequencies.
This component belongs to the APTM series of power MOSFET modules, which are engineered for high-performance power electronics. The series utilizes silicon technology optimized for low on-resistance and robust switching characteristics. These modules are commonly used in industrial applications demanding reliable power conversion and motor drive solutions.
Publicly confirmed substitute part numbers for this specific model were not identified in available documentation. Verify compatibility with any alternative modules by comparing electrical ratings, pin configurations, and thermal characteristics.