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The APTM10HM19FT3G is a MOSFET module from Microchip Technology, classified under the PM-MOSFET-FREDFET-5-SP3F series. It features an N-channel configuration with four channels arranged in a full bridge topology. The device supports a drain-source voltage of 100V and a continuous drain current of 50A. It is designed for chassis mounting and operates within a temperature range of -40°C to +150°C junction temperature. The module has a maximum power dissipation rating of 208W and utilizes a press-in PCB installation style.
Verify the specific package variant against official documentation, as sources indicate both SP3 and SP3F designations. Confirm mechanical compatibility for chassis or press-in PCB mounting requirements. Ensure the selected component matches the required 100V and 50A electrical ratings for the target application circuit design.
Select this module for applications requiring a compact full bridge configuration with high thermal efficiency. The 100V rating suits low-voltage DC-DC converters and motor control systems. Consider the 208W dissipation limit when designing heat sinks. Verify the specific pinout and mounting style (chassis vs. press-in) required by the system architecture before integration.
This component belongs to Microchip's discrete and power modules category, specifically within the MOSFET modules sub-category. It represents a silicon-based power semiconductor solution designed for robust industrial environments. The module integrates multiple transistors into a single package to reduce board space and simplify assembly compared to discrete components.
Public confirmed substitute part numbers are not available in the provided source material.