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Product Detailed Parameters
- Description：MOSFET 6N-CH 100V 70A SP6-P
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：70A
- Rds On (Max) @ Id, Vgs：21mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：5100pF @ 25V
- Power - Max：208W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6-P
- Grade：-
- Qualification：-
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Overview
The APTM10TDUM19PG is a six-channel N-channel MOSFET array manufactured by Microsemi Corporation. It features a 100V drain-source voltage rating and supports a continuous drain current of 70A at 25°C. The device has a maximum power dissipation of 208W and operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a maximum gate threshold voltage of 4V at 1mA, a maximum gate charge of 200nC at 10V, and an input capacitance of 5100pF at 25V. The on-resistance is specified as 21 milliohms at 35A and 10V. It utilizes an SP6-P base-mounted package.
Feature Summary
- Six-channel N-configuration designed for three-phase bridge applications
- Base-mount construction for efficient thermal management
- High-current capability with 70A continuous drain rating
- Low on-resistance for improved conduction efficiency
Applications
- Three-phase motor drive inverters
- Industrial power conversion systems
- High-current switching circuits requiring base-mount isolation
Procurement Notes
Verify component authenticity through authorized channels due to discontinued status. Confirm package integrity and pin alignment against the SP6-P specification. Review datasheet for handling precautions related to base-mounted thermal interfaces. Ensure compatibility with existing heatsink mounting hardware before integration.
Selection Notes
Select this component for designs requiring integrated six-channel N-channel switching in a single base-mounted package. Evaluate thermal resistance requirements against the 208W dissipation limit. Consider the 100V voltage rating and 70A current capacity relative to load demands. Verify gate drive compatibility with the 4V threshold and 200nC charge specifications.
Part Context
This part belongs to the APTM10 series of MOSFET arrays from Microsemi Corporation. The series focuses on high-power discrete semiconductor solutions for industrial applications. The specific model integrates multiple channels to simplify circuit layout and reduce component count in power electronics designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with alternative six-channel N-channel MOSFET arrays if sourcing new production units.
