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The APTM20AM04FG is a single N-channel MOSFET module from the Microchip POWER MOS 7 series, housed in an SP-6 package. It features a 200V drain-source breakdown voltage and supports a continuous drain current of 372A with a maximum on-resistance of 4 milliohms. The device handles up to 1.25kW power dissipation and operates within a junction temperature range of -40°C to +150°C.
Verify the specific suffix against official Microchip documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with required gate drive voltages and thermal interface materials before integration into final designs.
Select this component for applications requiring high current handling and low conduction losses. Evaluate thermal resistance requirements against system heat sinking capabilities. Confirm that the SP-6 package dimensions fit the mechanical constraints of the target assembly.
This module belongs to the APTM20 series, which utilizes silicon technology for power switching. It is part of Microchip's discrete and power modules portfolio, designed to replace older generation discrete solutions with higher density and improved efficiency in power electronics.
Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout and thermal pad configurations match existing board layouts when considering cross-references.