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The APTM20DUM04G is a dual N-channel MOSFET array manufactured by Microchip Technology, housed in an SP6 base-mounted package. It features a drain-source voltage (Vdss) of 200V and supports a continuous drain current (Id) of 372A at 25°C. The device has a maximum power dissipation of 1250W and operates within a junction temperature range of -40°C to 150°C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 5V max at 10mA, a maximum gate charge (Qg) of 560nC at 10V, and an input capacitance (Ciss) of 28900pF at 25V. The on-resistance (Rds(on)) is 5mΩ max at 186A with a gate drive of 10V.
Verify the specific ordering suffix and manufacturing date code against the latest Microchip datasheet to ensure compliance with current RoHS3 and REACH standards. Confirm that the SP6 package dimensions match your mechanical design constraints before finalizing procurement. Check for any recent Product Change Notifications (PCN) regarding assembly site or material changes.
Select this component when a dual N-channel MOSFET array with 200V rating and high current handling is required. Ensure the gate driver can provide sufficient charge to meet switching speed requirements given the 560nC gate charge. Verify that the cooling solution can handle the 1250W power dissipation under worst-case operating conditions.
This part belongs to the APTM20 series of discrete semiconductor modules from Microchip Technology. It is designed for high-power applications requiring robust switching performance. The SP6 package is specifically engineered for screw mounting to facilitate heat transfer to a heatsink.
Consult official Microchip documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, electrical parameters, and thermal characteristics.