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The APTM50AM38FTG is a dual N-channel POWER MOS 7® MOSFET array manufactured by Microchip Technology. It features a 500V drain-source voltage rating and a continuous drain current of 90A per channel. The module delivers a total power dissipation of 694W and utilizes the SP-4 chassis mount package. This silicon-based discrete semiconductor component is designed for high-power switching applications requiring robust thermal performance and low on-resistance characteristics.
Verify the specific suffix FTG against the official Microchip datasheet to confirm package variant and tape/reel or tube packaging configuration. Ensure the ordering part number matches the required pinout and thermal interface specifications for your chassis design. Cross-reference with the latest product change notifications to confirm material composition and RoHS compliance status prior to procurement.
Select this component when designing circuits requiring dual isolated N-channel switches with a 500V blocking capability. The 90A current rating suits moderate-to-high power density applications. Consider the SP-4 package dimensions for mechanical integration. Evaluate the 694W power dissipation limit against your thermal management strategy to ensure junction temperatures remain within safe operating limits during peak load conditions.
This device belongs to the APTM series of discrete power modules from Microchip Technology. It represents an evolution in silicon MOSFET packaging, combining multiple dies into a single hermetically sealed unit. The series targets industrial and automotive sectors where reliability and thermal efficiency are critical. It complements single-die modules by offering integrated switching solutions for bridge configurations.
Consult Microchip's official cross-reference documentation for verified substitutes. Direct replacements must match the 500V/90A/SP-4 specification profile. Verify pin compatibility and thermal resistance values before substituting with other manufacturers' dual MOSFET arrays.