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The APTM50DDAM65T3G is a dual N-channel MOSFET module manufactured by Microchip Technology. It features a silicon technology base and utilizes the SP3F package configuration for chassis mounting. The device supports a maximum collector-emitter voltage of 500V and a continuous collector current of 51A at 25°C. Key electrical parameters include a gate-source voltage range of -30V to +30V, a power dissipation capacity of 390W, and an operating temperature range from -40°C to +125°C. The unit weight is specified as 110g.
Verify component authenticity through authorized Microchip Technology distributors or certified partners. Confirm RoHS compliance status prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate package integrity against shipping damage risks associated with heavy screw-mount modules. Cross-reference datasheet revisions for any recent parameter updates.
Select this module when a compact dual-channel solution is required for high-current applications. The SP3F package facilitates efficient thermal management via direct chassis contact. Evaluate the 51A continuous current rating against peak load demands. Consider the 500V blocking capability for medium-voltage switching environments. Ensure mechanical clearance accommodates the chassis mount footprint.
This component belongs to the APTM series of power modules from Microchip Technology. It represents a discrete power semiconductor solution designed for robust industrial environments. The module integrates two channels to reduce board space compared to individual discrete packages. It serves as a building block for complex power electronics architectures.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and thermal resistance if considering alternative manufacturers. Check for functional equivalence in voltage and current ratings before substitution.