APTM50DHM35G

Overview

The APTM50DHM35G is an asymmetrical bridge MOSFET power module utilizing Power MOS 7 technology. It features a 500V drain-source breakdown voltage and a typical on-resistance of 35mΩ at 25°C. The device supports a continuous drain current of 99A at 25°C case temperature and includes an integrated diode rated for 600V reverse voltage with a 100A forward current capability. Key electrical parameters include a maximum gate-source voltage of ±30V, a junction-to-case thermal resistance of 0.16°C/W for the transistor, and an RMS isolation voltage of 2500V.

Feature Summary

• Power MOS 7 technology providing low on-resistance and low gate charge
• Kelvin source connection designed to minimize stray inductance during switching
• Integrated freewheeling diode with avalanche energy rating for rugged operation
• Isolated package architecture enabling direct mounting to heatsinks

Applications

• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives

Procurement Notes

Verify component authenticity by cross-referencing the part number against official Microsemi documentation. Confirm that the SP6 package outline matches the physical dimensions specified in the datasheet. Ensure handling procedures account for electrostatic discharge sensitivity as outlined in application note APT0502. Validate that the specific revision level aligns with your design requirements before integration.

Selection Notes

Select this module when high-frequency operation and low thermal resistance are critical. The asymmetrical bridge configuration suits applications requiring distinct switching characteristics for the upper and lower legs. Consider the 2500V isolation rating for safety-critical designs. Evaluate the thermal impedance curves to ensure adequate heat sinking for the intended duty cycle and ambient conditions.

Part Context

This component belongs to the APT series of asymmetric bridge MOSFET modules manufactured by Microsemi. These modules integrate high-voltage silicon technologies into a single compact package to reduce parasitic inductance. The SP6 package provides a standardized form factor for industrial power electronics, facilitating direct mounting and efficient thermal management in high-power density systems.

Replacement Considerations

Consult official Microsemi documentation for verified substitute part numbers. Do not assume compatibility based solely on voltage or current ratings. Verify pinout configurations and thermal characteristics before substituting.