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Product Detailed Parameters
- Description：MOSFET 4N-CH 500V 26A SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：500V
- Current - Continuous Drain (Id) @ 25°C：26A
- Rds On (Max) @ Id, Vgs：168mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：3259pF @ 25V
- Power - Max：208W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Grade：-
- Qualification：-
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Overview
The APTM50H14FT3G is a silicon-based N-channel MOSFET module from the POWER MOS 7 series, manufactured by Microchip Technology. It features a Full Bridge configuration within an SP-32 screw-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 500 V and a continuous drain current (Id) of 26 A. The on-resistance (Rds On) is specified at 140 mOhms. Gate-source voltage limits are ±30 V with a threshold voltage of 3 V. The device supports a power dissipation of 208 W and operates between -40°C and +150°C. Switching characteristics include a rise time of 17 ns, fall time of 41 ns, turn-on delay of 10 ns, and turn-off delay of 50 ns.
Feature Summary
- Integrates a full bridge topology combining N-channel MOSFETs and Fast Recovery Diodes in a single module.
- Utilizes POWER MOS 7 technology for optimized switching performance and low conduction losses.
- Designed for robust thermal management via direct screw mounting to heatsinks.
Applications
- High-frequency DC-DC converters
- Motor drive inverters
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix FT3G against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the SP-32 package dimensions match your mechanical design constraints. Confirm that the gate drive requirements align with the specified threshold and voltage limits before finalizing procurement.
Selection Notes
Select this component when a compact full bridge solution is required for high-voltage applications up to 500 V. The 26 A current rating and 140 mOhm resistance make it suitable for moderate power levels where efficient switching is critical. Consider the screw-mount installation method for thermal management needs in industrial environments.
Part Context
This module belongs to Microchip's POWER MOS 7 family, which integrates fast recovery diodes with MOSFETs to reduce parasitic inductance and improve switching efficiency. The SP-32 package provides a standardized form factor for easy integration into existing power electronics designs requiring isolated or semi-isolated bridge configurations.
Replacement Considerations
Consult official substitution guides for equivalent full bridge modules with similar voltage and current ratings. Verify that any alternative part maintains compatible gate drive requirements and thermal characteristics for direct replacement in the SP-32 footprint.
