APTM50HM75FT3G

Overview

The APTM50HM75FT3G is a silicon-based N-channel MOSFET module from the POWER MOS 7 family, manufactured by Microchip Technology. It utilizes the SP-32 package and features a full bridge configuration with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 500 V, a continuous drain current of 46 A, and a maximum on-resistance of 75 mΩ at 10 V gate drive. The device supports a gate-source voltage range of -30 V to +30 V, operates within a junction temperature range of -40°C to +150°C, and has a power dissipation rating of 357 W.

Feature Summary

• Integrates four N-channel MOSFETs in a single full bridge topology for efficient power conversion.
• Utilizes advanced POWER MOS 7 technology to achieve low conduction losses and high reliability.
• Designed for robust thermal management with a screw-mount baseplate interface.

Applications

• High-frequency DC-DC converters
• Motor drive inverters
• Uninterruptible power supplies (UPS)
• Industrial motor control systems

Procurement Notes

Verify the specific suffix FT3G against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SP-32 housing. Cross-reference thermal resistance values with your heatsink design requirements. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement orders.

Selection Notes

Select this component when a compact full bridge solution is required for 500 V applications. The 75 mΩ on-resistance offers a balance between conduction loss and switching performance. Consider the 46 A current rating relative to your peak load demands and duty cycle. Evaluate the SP-32 package dimensions against available mechanical space constraints in the target assembly.

Part Context

This module belongs to the APTM50 series of discrete power modules, which are engineered for high-efficiency switching applications. The POWER MOS 7 generation represents a significant advancement in silicon planar MOSFET technology, offering improved ruggedness and lower figure-of-merit compared to previous iterations. It serves as a core building block for modern power electronics designs requiring reliable high-current switching.

Replacement Considerations

Direct substitutes may include other Microchip APTM50 series modules with similar voltage and current ratings, such as APTM50H14FT3G or APTM50HM65FT3G, provided their on-resistance and package dimensions match the design requirements. Verify pinout compatibility and thermal characteristics before substitution.