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The APTM50HM75SCTG is a silicon-based MOSFET module manufactured by Microchip Technology. It features a four-channel N-configuration arranged in a full-bridge topology within an SP4 package. The device supports a drain-source voltage of 500V and delivers a continuous drain current of 46A at 25°C. Key electrical parameters include a maximum on-resistance of 90 milliohms at 10V gate drive, a gate charge of 123nC, and an input capacitance of 5590pF. It operates within a junction temperature range of -40°C to 150°C with a maximum power dissipation of 357W.
Verify the specific suffix CTG against official Microchip documentation to confirm packaging and environmental compliance details. Confirm lead times directly with authorized distributors as manufacturing schedules are subject to change. Ensure the ordering quantity aligns with factory minimum order requirements before finalizing procurement actions.
Select this component when a pre-configured full-bridge arrangement is required to minimize board space and assembly complexity. Evaluate the 90 milliohm on-resistance against system conduction loss targets. Consider the 500V rating for compatibility with standard industrial bus voltages while ensuring adequate thermal management for the 357W dissipation capability.
This module belongs to the APTM50 series of discrete semiconductor modules from Microchip Technology. The series focuses on providing integrated power solutions that combine multiple transistors into standardized packages. These modules are designed to simplify the design process for engineers implementing bridge topologies in medium-power electronic systems.
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