APTMC120AM25CT3AG

Overview

The APTMC120AM25CT3AG is a silicon carbide (SiC) MOSFET discrete semiconductor module manufactured by Microchip Technology. It features an N-channel configuration housed in the SP-3F package. Key electrical parameters include a drain-to-source voltage of 1200V and a continuous drain current of 113A at 25°C case temperature. The device exhibits a maximum on-resistance of 25 milliohms, with typical switching times of 30ns for turn-on and 25ns for turn-off. It operates within a junction temperature range of -40°C to +175°C and dissipates up to 680W.

Feature Summary

• Utilizes silicon carbide technology for high thermal conductivity and superior performance under high-temperature conditions.

Applications

• High-efficiency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies

Procurement Notes

Verify the specific suffix 'CT3AG' against official Microchip documentation to confirm exact pinout and thermal characteristics. Ensure compatibility with SP-3F mounting requirements. Cross-reference datasheet revisions to confirm compliance with RoHS standards and material declarations before integration into final designs.

Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds. Evaluate thermal management solutions to maintain junction temperatures within specified limits. Compare total system efficiency gains against alternative technologies based on the specific operating frequency and load requirements of the target design.

Part Context

This module belongs to Microchip's portfolio of wide-bandgap power devices. It represents a shift from traditional silicon-based modules to silicon carbide, offering improved energy efficiency. The SP-3F form factor allows for standardized mechanical integration within existing industrial power electronics architectures.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided data.