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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 55A SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Rds On (Max) @ Id, Vgs：49mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id：2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs：98nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：1900pF @ 1000V
- Power - Max：250W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Grade：-
- Qualification：-
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Overview
The APTMC120AM55CT1AG is a discrete semiconductor module manufactured by Microchip Technology, utilizing Silicon Carbide (SiC) technology. It features an N-Channel MOSFET and SiC Schottky Barrier Diode configuration within the SP1F package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 42A to 55A depending on thermal conditions, and a maximum on-state resistance of 49 mOhms. The module supports screw mounting with a power dissipation rating of 250W and operates within a temperature range of -40°C to +125°C.
Feature Summary
- High reliability and robust design suitable for demanding power applications
- Fast switching speed with low noise characteristics
- Compact size enabling high power handling capabilities
- Easily mountable design ensuring reliable integration
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Solar inverters
Procurement Notes
Verify component authenticity through authorized Microchip distributors or certified partners. Confirm RoHS compliance status via official datasheets. Check for Product Change Notifications regarding manufacturing updates. Ensure proper handling procedures for ESD-sensitive devices during storage and assembly. Validate package integrity against shipping damage prior to installation.
Selection Notes
Select this module for applications requiring high-voltage SiC performance in compact form factors. Consider the 1.2 kV rating and low on-resistance for efficiency optimization. Evaluate thermal management requirements given the 250W dissipation rating. Compare against alternative SP1 packages for mechanical fit. Assess switching speed benefits for high-frequency operation needs.
Part Context
This part belongs to Microchip's discrete semiconductor module portfolio, specifically designed for power electronics. It integrates SiC MOSFETs and diodes for enhanced performance over traditional silicon solutions. The SP1F package provides a standardized mounting solution for various industrial and commercial power conversion systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip technical support for direct replacements or obsolescence management strategies.
