APTMC60TLM55CT3AG

Description：MOSFET 4N-CH 1200V 48A SP3
Series：-

SKU:2997bd083841 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 1200V 48A SP3
Series：-
Mfr：Microchip Technology
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Three Level Inverter)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：48A (Tc)
Rds On (Max) @ Id, Vgs：49mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：1900pF @ 1000V
Power - Max：250W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP3
Supplier Device Package：SP3
Grade：-
Qualification：-

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APTMC60TLM55CT3AG

Overview

The APTMC60TLM55CT3AG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It features a four-channel N-Channel configuration housed in an SP3F package. The device supports a drain-to-source voltage of 1200V and operates within a junction temperature range of -40°C to +150°C. Maximum power dissipation is rated at 250W, with continuous current capabilities specified at 55A or 48A depending on the source documentation.

Feature Summary

Utilizes Silicon Carbide technology for high-performance switching
Integrates four independent N-Channel MOSFETs in a single module
Designed for high-temperature operation up to 150°C junction temperature

Applications

High-frequency power conversion systems
Industrial motor drives
Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific datasheet version when procuring this component, as documentation sources indicate variations in continuous current ratings between 48A and 55A. Confirm that the SP3F package type matches your thermal management requirements. Ensure compatibility with the 1200V rating for your circuit design. Cross-reference the manufacturer part number to avoid confusion with similar SiC modules in the same product family.

Selection Notes

Select this module for applications requiring robust high-voltage handling and wide bandgap efficiency. The four-channel architecture allows for complex bridge configurations within a compact footprint. Consider the 250W power dissipation limit when designing heatsinking solutions. The wide operating temperature range makes it suitable for demanding industrial environments where thermal stability is critical for long-term reliability.

Part Context

This component belongs to Microchip's discrete semiconductor module portfolio, specifically utilizing Silicon Carbide technology. It is distinct from standard silicon MOSFETs due to its superior thermal and electrical performance characteristics. The SP3F packaging provides a standardized mechanical interface for mounting and thermal coupling in power electronics assemblies.