APTML1002U60R020T3AG

APTML1002U60R020T3AG

$146.73
  • Description:MOSFET 2N-CH 1000V 20A SP3
  • Series:-

SKU:6908e52754ad Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1000V 20A SP3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Rds On (Max) @ Id, Vgs:720mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:6000pF @ 25V
  • Power - Max:520W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTML1002U60R020T3AG

Overview

The APTML1002U60R020T3AG is a linear MOSFET power module manufactured by Microsemi Corporation. It features a dual-channel N-channel configuration designed for high-power applications. The device supports a maximum voltage rating of 1000V and a continuous current capacity of 20A. Thermal performance includes a power dissipation rating of 520W, suitable for chassis mounting environments. The component utilizes the SP3 package format to facilitate efficient heat transfer and robust mechanical integration within industrial or aerospace power systems.

Feature Summary

  • Dual-channel N-channel MOSFET array architecture
  • High-voltage capability up to 1000V
  • Chassis mount packaging for thermal management
  • Linear operation mode support

Applications

  • Industrial motor control systems
  • Aerospace power distribution units
  • High-voltage DC-DC conversion stages
  • Defense electronics power amplifiers

Procurement Notes

Verify the specific suffix T3AG against official Microsemi documentation to confirm exact screening levels and environmental compliance status. Ensure that the SP3 package dimensions match your chassis mounting requirements prior to procurement. Cross-reference the manufacturer part number with the latest datasheet revision to confirm active status and availability constraints. Request full test data sheets if operating in radiation-hardened or military-grade environments.

Selection Notes

Select this component when a ruggedized, dual-channel MOSFET solution is required for high-voltage switching applications. Consider the 520W dissipation rating relative to your thermal design capabilities. Evaluate the SP3 package footprint against available board space or chassis cutouts. Confirm that the 20A current rating aligns with peak load requirements without exceeding safe operating area limits under worst-case thermal conditions.

Part Context

This module belongs to the APTML10 series from Microsemi's Power Products Group, targeting high-reliability sectors such as aerospace and defense. The series emphasizes robust construction and high-voltage handling capabilities. Microsemi provides specialized semiconductor solutions for critical infrastructure, ensuring long-term availability and performance stability in demanding operational environments compared to standard commercial alternatives.

Replacement Considerations

Consult official Microsemi substitution guides for direct equivalents. Verify pin compatibility and thermal resistance values before replacing with generic dual-channel MOSFET arrays. Ensure any substitute maintains the 1000V rating and SP3 form factor to preserve system integrity.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is 1000V.

How many channels are integrated in this module?

The module integrates two independent N-channel MOSFETs.

What is the recommended mounting method?

The component is designed for chassis mounting via its SP3 package.

APTML1002U60R020T3AGAPTML1002U60R020T3AG
$146.73
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