APTSM120AM08CT6AG

Description：MOSFET 2N-CH 1200V 370A SP6
Series：-

SKU:0a08061b5ff3 Category: FET, MOSFET Arrays Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 370A SP6
Series：-
Mfr：Microsemi Corporation
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual), Schottky
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：370A (Tc)
Rds On (Max) @ Id, Vgs：10mOhm @ 200A, 20V
Vgs(th) (Max) @ Id：3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：1360nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2300W
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6
Grade：-
Qualification：-

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APTSM120AM08CT6AG

Overview

The APTSM120AM08CT6AG is a silicon carbide (SiC) power module manufactured by Microsemi Corporation. It features an N-channel MOSFET integrated with a SiC Schottky Barrier Diode (SBD). The device provides a drain-source voltage of 1.2 kV and a continuous drain current of 370 A at 25°C. Key electrical parameters include a forward voltage of 1.5 V, a gate-source voltage range of -10 V to +25 V, and a maximum power dissipation of 245 W. The module utilizes the SP1F screw-mount package and operates within a temperature range of -40°C to +125°C.

Feature Summary

Utilizes Silicon Carbide technology for high-temperature and high-voltage performance
Integrates N-channel MOSFET with complementary SiC Schottky Barrier Diode
Designed for robust high-current power conversion applications

Applications

High-current power conversion systems
Industrial motor drives
Uninterruptible power supplies

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the received unit matches the specific part number and package type. Review the manufacturer datasheet for handling instructions and thermal management requirements. Ensure compliance with environmental regulations such as RoHS standards prior to integration into final assemblies.

Selection Notes

Select this component for designs requiring high efficiency and thermal stability in high-voltage environments. The integrated diode simplifies circuit topology compared to discrete solutions. Evaluate thermal resistance characteristics against the system's heat sink capabilities. Consider the gate drive voltage limits when designing the control interface.

Part Context

This module belongs to the family of high-performance silicon carbide power devices from Microsemi. These components are engineered to replace traditional silicon-based switches in demanding applications. The SP1F packaging facilitates secure mechanical mounting and efficient thermal transfer to cooling structures.