ARF448BG

ARF448BG

  • Description:RF MOSFET 150V TO247
  • Series:-

SKU:bb0208fc055c Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 150V TO247
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Frequency:40.68MHz
  • Gain:15dB
  • Voltage - Test:150 V
  • Current Rating (Amps):15A
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:140W
  • Voltage - Rated:450 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Configuration:N-Channel

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ARF448BG

Overview

The ARF448BG is an N-channel enhancement mode RF power MOSFET designed for push-pull amplifier applications up to 65 MHz. It features a Drain-Source Breakdown Voltage of 450V and a continuous drain current of 15A at 25°C case temperature. The device delivers 140W output power with 15dB gain and 75% efficiency at 40.68 MHz in Class C operation. Packaged in a TO-247 housing, it exhibits low thermal resistance of 0.55°C/W and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Symmetric pair configuration optimized for push-pull RF power amplifier circuits
  • High electrical ruggedness capable of sustaining 20:1 VSWR without degradation
  • Nitride passivated die construction enhances long-term reliability

Applications

  • Scientific RF power amplifiers
  • Commercial RF power amplifiers
  • Medical RF power amplifiers
  • Industrial RF power amplifiers

Procurement Notes

Verify the specific suffix 'G' against the manufacturer's official documentation to confirm if it denotes a specific tape-and-reel packaging variant or environmental compliance status distinct from the standard ARF448B. Ensure the procurement order explicitly references the full part number to avoid confusion with the complementary ARF448A unit required for symmetric push-pull implementation.

Selection Notes

Select this component for high-frequency applications operating up to 65 MHz where high breakdown voltage is critical. The 450V rating provides significant margin over the typical 150V supply voltage used in its rated performance tests. Consider the TO-247 package for efficient heat dissipation given the 1.5W thermal resistance, ensuring adequate heatsinking to maintain junction temperatures within the specified operational limits during continuous RF drive.

Part Context

The ARF448BG belongs to a series of symmetric N-channel RF power transistors manufactured by Advanced Power Technology (APT), now part of Microsemi Corporation. These devices are engineered specifically for common source configurations in radio frequency power amplification. The series includes complementary pairs like the ARF448A and ARF448B, which share identical electrical characteristics but feature mirrored pinouts to facilitate balanced push-pull circuit designs.

Replacement Considerations

The ARF446 and ARF447 are documented as meeting the same electrical specifications as the ARF448 series. They serve as functional substitutes in terms of performance metrics, though their pin-outs are mirror images of each other. Verify mechanical fitment and pin compatibility when substituting these units in existing PCB layouts.

ARF448BGARF448BG

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