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The ARF449AG is an N-channel enhancement mode RF power MOSFET designed for push-pull applications up to 120 MHz. It features a 450V drain-source breakdown voltage and a continuous drain current of 9A at 25°C case temperature. The device delivers 90W output power with 13dB gain and 75% efficiency in Class C operation at 81.36 MHz. Packaged in a TO-247 housing, it exhibits low thermal resistance of 0.76°C/W and supports junction temperatures from -55°C to 150°C.
Verify the specific suffix designation against official Microchip documentation to confirm exact electrical tolerances or package variations. Confirm RoHS compliance status as indicated in the datasheet revision history. Ensure handling procedures account for electrostatic discharge sensitivity inherent to MOSFET technology.
Select this component for high-voltage RF environments requiring robust performance up to 120 MHz. The symmetric design facilitates balanced push-pull topologies. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and maximum operating temperature limits.
This part belongs to the ARF449 series of RF power transistors manufactured by Microchip Technology (formerly Advanced Power Technology). The series includes complementary devices like the ARF449B designed to function as a matched pair. These components are engineered specifically for high-frequency power amplification tasks.
The ARF449B serves as the complementary symmetric pair for push-pull configurations. The ARF446 and ARF447 share similar electrical specifications but feature mirrored pinouts.